Nitride semiconductor light emitting device and manufacturing method thereof

ABSTRACT

A nitride semiconductor light emitting device having preferable light emitting characteristics even if a threading dislocation extends through single crystal layers.  
     The nitride semiconductor light emitting device includes an active layer obtained by depositing group-3 nitride semiconductors, and a barrier layer disposed adjacent to the active layer and having a greater bandgap than that of the active layer, the active layer having a barrier portion which surrounds a threading dislocation and is defined by an interface spreading around the threading dislocation and which is made of the same material as that of the barrier layer.

BACKGROUND OF THE INVENTION

[0001] 1. FIELD OF THE INVENTION

[0002] The present invention relates to a group-3 nitride semiconductor device (referred to as device hereinbelow), and more particularly, in particular a nitride semiconductor light emitting device and a manufacturing method thereof.

[0003] 2. BACKGROUND ART

[0004] Extensive research is now underway on gallium nitride (referred to as GaN hereinbelow) and related compounds as a material system for a shortwave light emitting device, in particular, a shortwave semiconductor laser. A GaN-based semiconductor laser device is manufactured by successively depositing semiconductor single-crystal layers such as (Al_(x)Ga_(l-x))_(l-y)In_(y)N (O≦×≦1, 0≦y≦1) on a crystal substrate.

[0005] A metal organic chemical vapor deposition method (abbreviated as MOCVD hereinbelow) is generally used to produce such a single-crystal layer. In this method, source gases containing trimethyl gallium (abbreviated as TMG hereinbelow) as a group-3 precursor material and ammonia (NH₃) as a group-5 precursor material are introduced into a reactor to react at a temperature within the range of 900-1000° C., thereby depositing compound crystals on the substrate. A multi-layer structure comprising various compounds can be obtained by changing the ratio of the precursors fed into the reactor to deposit many different layers on the substrate.

[0006] If the deposited single-crystal layer has many penetrating defects, the light emitting performance of the device is deteriorated substantially. Such defect is called threading dislocation, which is a linearly extending defect that penetrates the crystal layer along the growth direction. Since a threading dislocation acts as a non-radiative recombination center for carriers, a semiconductor light emitting device comprising a layer with many dislocations suffers from poor luminous efficiency. The above mentioned defect is generated due to crystal misfit strain at an interface between the substrate and an overlying layer formed thereon. Attempts to reduce the effect of the misfit at the interface have been made by choosing substrate materials having similar crystal structure, lattice constant, and thermal expansion coefficient to those of GaN-based crystal.

[0007] A material, which meets the above requirements and has good compatibility with a substrate, is a semiconductor crystal itself. However, as for group-3 nitride semiconductors (Al_(x)Ga_(l-x))_(l-y)In_(y)N, it is inevitable to use dissimilar materials such as sapphire or the like, because there is no nitride semiconductor bulk crystal which is most suitable for a substrate. Sapphire has a lattice constant different from that of GaN by about 14%.

[0008] One approach, known as the two-step-growth method, was proposed to accommodate the misfit at the interface between a sapphire substrate and a Ga-based single-crystal layer grown thereon to reduce the generation of crystal defects in the GaN-based single-crystal layer. This method comprises the steps of forming a lower-temperature buffer layer consisting of aluminum nitride (AlN) on the sapphire substrate at a lower temperature within the range of 400-600° C., and then forming a GaN single-crystal layer over the lower-temperature buffer layer. However, the above method has not been completely successful in reducing the generation of such defects that pass through the GaN single-crystal layer.

[0009] Generally, as a dislocation in semiconductor crystals acts as a center of non-radiative recombination and is substantially responsible for degrading the light emitting characteristics of light emitting devices such as light emitting diodes and semiconductor lasers, it is desirable that the crystals in these devices do not includes any dislocations. Therefore, a reduction in threading dislocations has been developed.

[0010] A main object of the invention is to provide a nitride semiconductor light emitting device having good luminescent characteristics.

[0011] Another object of the invention is to provide a method for manufacturing the above nitride semiconductor light emitting device whereby the generation of defects passing through a single-crystal layer formed on a substrate can be reduced.

SUMMARY OF THE INVENTION

[0012] The nitride semiconductor light emitting device according to the present invention comprises an active layer comprising group-3 nitride semiconductors, and a barrier layer made from a predetermined material and provided adjacent to the active layer. The barrier layer has a greater bandgap than that of the active layer. The light emitting device further comprises a barrier portion formed of the predetermined material for surrounding a threading dislocation in the active layer. The barrier portion is defined by interfaces enclosing the threading dislocation.

[0013] The nitride semiconductor light emitting device according to the present invention has a feature in that the active layer has one of a single and multiple quantum well structure.

[0014] The nitride semiconductor light emitting device according to the present invention has a feature in that the predetermined material of the barrier layer fills up a recess enclosed with the interfaces on the active layer to smooth surfaces of the recess.

[0015] The nitride semiconductor light emitting device according to the present invention has a feature in that the barrier portion has one of a cone-shape, truncated cone shape, and combination thereof.

[0016] The nitride semiconductor light emitting device according to the present invention has a feature in that the group-3 nitride semiconductor single-crystal layers are (Al_(x)Ga_(l-x))_(l-y)In_(y)N (O≦X≦1, 0≦y≦l).

[0017] The nitride semiconductor light emitting device according to the present invention further comprises a low temperature barrier layer provided between the barrier layer and the active layer, and that the low temperature barrier layer is formed of substantially the same predetermined material as that of the barrier layer at substantially the same temperature as the growth temperature of the active layer.

[0018] The nitride semiconductor light emitting device according to the present invention has a feature in that the low temperature barrier layer has a composition ratio of AlN which is less than a composition ratio of the barrier layer.

[0019] According to the present invention, in order to manufacture a nitride semiconductor light emitting device comprising an active layer provided by depositing group-3 nitride semiconductor single-crystal layers (Al_(x)Ga_(l-x))_(l-y)In_(y)N (O≦X≦1, 0≦y≦l) and a barrier layer provided adjacent to the active layer with a greater bandgap than that of the active layer, a method comprises the steps of forming a pit defining a recess attributable to a threading dislocation in semiconductor layers formed on a substrate in the active layer of group-3 nitride semiconductors, and depositing a material of the barrier layer on the active layer to form a barrier portion spreading around the threading dislocation and have an interface defined by the side surface of the recess.

[0020] The method according to the present invention has a feature in that the step of forming the pit comprises a step of etching the active layer after the active layer is formed.

[0021] The method according to the present invention has a feature in that the etching in the step of etching terminates when corrosion partially reaches the semiconductor layers along the threading dislocation.

[0022] The method according to the present invention has a feature in that the step of forming the pit comprises the step of forming the semiconductor layers at a temperature within a range of 600-850° C. prior to deposition of the active layer.

[0023] The method according to the present invention has a feature in that the method further comprises the step of forming a low temperature barrier layer of substantially the same material as that of the barrier layer at substantially the same temperature as a growth temperature of the active layer between the step of forming the pit and the step of depositing the material.

[0024] The method according to the present invention has a feature in that the low temperature barrier layer has a composition ratio of AlN less than a composition ratio of the barrier layer.

[0025] According to the present invention, epitaxial growth of respective layers on a wafer in the manufacture of light emitting devices is effected by etching an active layer at a point of time when film forming up to the active layer or light emitting layer is completed, or beforehand causing low temperature growth of a guide layer, which is a semiconductor layer in a lower portion of the active layer. Then, after the active layer is formed and a recess for a barrier portion is formed in the active layer, the barrier portion having a greater bandgap than that of the active layer and defined by an interface surrounding a threading dislocation which extends in the active layer is formed. Described above, a wafer an upper structure for devices is completed.

[0026] According to the present invention, an barrier portion having a greater ban dgap than that of an active layer surround a threading dislocation, in the vicinity of which a carrier does not spread, so that a device has the improved light emitting characteristics.

BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The aforementioned aspects and other features of the invention are explained in the following description, taken in connection with the accompanying drawing figures wherein:

[0028]FIG. 1 is a schematic, cross sectional view showing a group (III) nitride semiconductor laser device according to the present invention;

[0029]FIG. 2 is a schematically fragmentary, perspective view showing an active layer of the group (III) nitride semiconductor laser device according to the present invention;

[0030]FIG. 3 is a schematically fragmentary, perspective view showing a substrate in the manufacturing process of semiconductor laser devices according to an embodiment of the present invention;

[0031]FIG. 4 is a schematically fragmentary, perspective view showing a substrate in the manufacturing process of semiconductor laser devices according to an embodiment of the present invention;

[0032]FIG. 5 is a graph showing a current/light output characteristics of semiconductor laser devices according to an embodiment of the present invention;

[0033]FIG. 6 is a schematic, cross sectional view showing a substrate in the manufacturing process of semiconductor laser devices according to a second embodiment of the present invention;

[0034]FIG. 7 is a schematic, cross sectional view showing a substrate in the manufacturing process of semiconductor laser devices according to the second embodiment of the present invention.

[0035]FIG. 8 is an electron microscope photograph, which substitutes a drawing and is taken of a crystal surface of a wafer substrate in the manufacturing process of semiconductor laser devices according to the second embodiment of the present invention;

[0036]FIG. 9 is a graph showing an excitation intensity dependence of a light emitting intensity with respect to a wafer in the manufacturing process of semiconductor laser devices according to a further embodiment of the present invention;

[0037]FIG. 10 is a schematic, cross sectional view showing lan active layer of a group (III) nitride semiconductor laser device according to a third embodiment of the present invention; and

[0038]FIG. 11 is a schematic, cross sectional view showing a substrate in the manufacturing process of semiconductor laser devices according to the third embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0039] A group-3 nitride semiconductor laser device according to an embodiment of the present invention will be described below with reference to the drawings. A first embodiment of the present invention will be described hereinafter with respect to the case where a wafer in the course of growth is taken out from an epitaxial growth apparatus to be etched as described above.

[0040]FIG. 1 shows a group-3 nitride semiconductor laser device according to the embodiment. The semiconductor laser device comprises a GaN (or AlN) layer 2 formed at a lower temperature, an n-type GaN layer 3, an n-type Al_(0.1)Ga_(0.9)N layer 4, an n-type GaN layer 5, an active layer 6 of multiple quantum well structure including InGaN as a main constituent, a p-type Al_(0.2)Ga_(0.8)N layer 7, a p-type GaN layer 8, a p-type Al_(0.1)Ga_(0.9)N layer 9, and a p-type GaN layer 10, which are deposited in the above order on a single crystal sapphire substrate 1. The semiconductor laser device further comprises an n-type side electrode 14 connected to the n-type GaN layer 3 and a p-type side electrode 13 connected to the p-type GaN layer 10. The p-type Al_(0.1)Ga_(0.9)N layer 9 has a ridge stripe portion 18. The device is covered with an insulating film 11 of SiO₂ for protection except for the electrodes. In this manner, the nitride semiconductor laser device of the present embodiment comprises an active layer including a multi-layered structure formed by successively depositing group-3 nitride semiconductors.

[0041] The semiconductor laser device emits light due to recombination of electrons and holes in the active layer 6. The n-type GaN layer 5 and p-type GaN layer 8 act as guide layers. The n-type GaN layer 5 and p-type GaN layer 8 serve to guide light generated in the active layer 6 to the guide layers 5, 8. The n-type GaN layer 5 and p-type GaN layer 8 also serve to trap electrons and holes in the active layer 6 effectively if they are to be set to have larger bandgap than that of the active layer 6. The p-type Al_(0.2)Ga_(0.8)N layer 7 is a barrier layer for enhancing the trap of a carrier (in particular, electron) injected. The n-type Al_(0.1)Ga_(0.9)N layer 4 and the p-type Al_(0.1)Ga_(0.9)N layer 9 are clad layers having lower refractive indexes than those of the guide layers 5, 8, so that differences in refractive index between the clad layers and the guide layers cause light to be guided in a film thickness direction. The ridge stripe portion 18 is provided in order to change the thickness of the clad layer 9 to produce lateral differences in the effective refractive index, thereby forcing light to travel only laterally. The n-type GaN layer 3 is an underlying layer which allows a current to flow. The n-type GaN layer 3 is required because sapphire constituting the substrate does not have any conductivity. Additionally, the lower-temperature growth layer, or GaN (or AlN) layer 2 is a so-called buffer layer for producing a smooth layer on the sapphire substrate which is a substance dissimilar to GaN.

[0042] Referring to FIG. 2, the above device further comprises a barrier portion 51 defined by an interface 50 of the active layer 6 and formed of the same material as that of the barrier layer 7. The interface 50 surrounds and spreads around a threading dislocation 15 extending from the lower guide layer 5 to the upper guide layer 8 in the active layer.

[0043] When a current is flowed to the device, electrons 16 injected from the n-type GaN layer 5 pass into the active layer 6 made of InGaN, as shown in FIG. 2. Since the active layer comprises the well layers 62 which have greater In composition ratio (that is, narrower bandgap), and the barrier layers 61 which have smaller In composition ratio (that is, wider bandgap), the electrons 16 injected are then collected in the well layers 62. Further, holes 17 injected from the p-type GaN guide layer 8 are also collected in the well layers 62 for the same reason. In this case, being blocked by the AlGaN barrier portion 51, both of electrons 16 and holes 17 cannot reach the threading dislocation 15. This is because the periphery of the threading dislocation 15 is covered by the AlGaN barrier portion 51 having a larger bandgap as compared with that of the well layers 62, which is composed of InGaN and in which In is great in composition. Thus, since the barrier portion 51 prevents the carrier from reaching the threading dislocation 15 which acts as a center of non-radiative recombination, the device has higher luminescence efficiency than that of one having no barrier portion 51.

[0044] The device having the structure shown in FIG. 1 will be manufactured in the following process in which a layer-structure of the laser device on a sapphire A-face substrate is formed with the MOCVD.

[0045] First, a sapphire substrate 1 is loaded into a MOCVD reactor, and then placed in a hydrogen gas flow under a pressure of 300Torr at a temperature of 1050° C. for ten minutes to heat-clean the surface of the substrate. The sapphire substrate 1 is then cooled to a temperature of 600° C. Next, an ammonia NH3 and trimethyl aluminum (abbreviated as TMA hereinbelow) as precursor materials are introduced to the reactor to deposit AlN layer, thereby forming a buffer layer 2 having a thickness of 50 nm.

[0046] Next, after stopping the feed of TMA, the sapphire substrate 1 with the buffer layer 2 is again heated up to 1050° C. while only NH3 gas is flowing through the reactor. TMG is then introduced to the reactor to deposit a n-type GaN underlying layer. During the above process, methylsilane (Me-SiH₃) as an n-type dopant is added to the precursor material gas.

[0047] At a point of time when the n-type GaN underlying layer 3 has grown to have a thickness of about 4μm, only the feed of TMA is stopped. Meanwhile, methylsilane continues to be supplied with an amount of supply increased. After this process is maintained for 5 minutes, a feed of methylsilane is decreased to an amount required for formation of an n-type layer. TMG is then introduced again, while TMA is simultaneously introduced so that an n-type AlGaN clad layer 4 is formed.

[0048] At a point of time when the n-type AlGaN clad layer 4 has grown to have a thickness of about 0.5μm, the feed of TMA is stopped, and an n-type GaN lower guide layer 5 is grown to a thickness of 0.1 μm.

[0049] At a point of time when growth of the n-type GaN guide layer 5 is completed, the feed of TMG and Me-SiH₃ is stopped, and the substrate starts to be cooled to have a temperature of 750° C. At a point of time when the substrate temperature reaches 750° C., the carrier gas is switched over from hydrogen to nitrogen. At a point of time when the gas flow becomes in a stable condition, TMG, trimethylindium (TMI), and Me-SiH₃ are introduced to grow barrier layers 61.

[0050] Subsequently, the feed of Me-SiH₃ is stopped and TMI is increased in flow rate so that the well layers 62 having a greater In composition ratio than that of the barrier layers are grown.

[0051] The growth of the barrier layers 61 and the well layers 62 is repeated in accordance with the number of superposed layers in the multiple quantum well structure. Described above, an active layer 6 of the multiple quantum well structure is formed.

[0052] At a point of time when a barrier layer 61 is formed on the last well layer 62, the feed of TMG, TMI, and Me-SiH₃ is stopped. At the same time, the substrate starts to be cooled. At a point of time when the substrate temperature is equal to or lower than 400° C., the feed of NH₃ is also stopped. At a point of time when the substrate temperature becomes a room temperature, the substrate is unloaded from the reactor.

[0053]FIG. 3 shows a layer structure on the substrate which is unloaded from the reactor in the course of growth prior to the growth of a p-type layer. It has been found that the layer structure includes a lot of threading dislocations 15, and that the layer structure of the above embodiment has a dislocation density on the order of 2E9 (1/cm²) by means of a measurement.

[0054] The resultant substrate with the layer structure is then immersed in H₃PO₄ (phosphoric acid) solution heated at 200° C. to be etched. Thus, a recess or pit attributable to the threading dislocation 15 in the lower guide layer 5 is formed in the active layer 6.

[0055]FIG. 4 shows the substrate subjected to etching in the hot phosphoric acid solution. Since GaN is chemically stable, it is substantially impervious to etching even in the hot phosphoric acid solution. However, an area in the vicinity of the dislocation is slightly etched to produce a pit 49. When the tip of the pit generated due to the dislocation reaches the n-type GaN layer, the depth of such a pit is established as a suitable etching depth. Thus, etching process terminates at a point of time when the tip of corrosion reaches the lower guide layer 5 along the threading dislocations 15. Generally, the active layer has a plurality of pits 49, each of which has a cone-shape or truncated cone. When the pits approach one another, they form a recess of continuous shape.

[0056] After the etching process, the substrate is adequately rinsed with pure water, ultrasonically-cleaned with an organic solvent, and then is again loaded in the MOCVD reactor.

[0057] Then, the substrate is again heated to 1050° C. while hydrogen and NH₃ as a carrier gas are flowing. TMG, TMA, and ethyl-cyclopentadienyl magnesium (Et-Cp₂Mg) as a material of p-type dopant are introduced to deposit a p-type AlGaN layer 7, thereby forming a barrier layer with a thickness of 0.02μm.

[0058] Referring to FIG. 1, at a point of time when the p-type AlGaN barrier layer 7 is formed, the pits (recesses) formed by the etching are filled with the p-type AlGaN. This is because the barrier layer 7 is formed at a high temperature of 1050° C., and AlGaN posses a natural characteristic of smoothing its surface. Therefore, once the surface of the barrier layer is smoothed, the individual layer to be formed on the barrier layer 7 can be formed so as to have a flat surface. Thus, the barrier portion 51 is formed to have a conical or truncated-conical shape. It should be noted that though only one barrier portion 51 is shown in FIG. 2, the multi-layer structure may have a plurality of barrier portions, which may be contiguous to one another dependently on the configuration of pits.

[0059] Subsequently, supplying of TMA is stopped, and a p-type GaN layer 8 is grown on the barrier layer 7 to have a thickness of 0.1μm. TMA is then introduced again so that a p-type AlGaN clad layer 9 is grown thereon to have a thickness of 0.5μm. Further, a p-type GaN contact layer 10 is grown on the layer 9 to have a thickness of 0.1 μm. Thereafter, supplying of TMG and Et-Cp₂Mg is stopped, and temperature drop is started. At a point of time when the substrate is cooled to 400° C., supplying of NH₃ is also stopped. At a point of time when the substrate is cooled to a room temperature, the substrate with multi-layer structure is unloaded from the reactor. The substrate with multilayer structure of the first embodiment is referred hereinafter to as a wafer 1.

[0060] For the purposes of comparison, a wafer was prepared in the same manner as in the above-described growth method without the above etching process. The wafer intended for comparison is referred hereinafter to as a wafer 2. More specifically, the wafer 2 was processed in the following manner. After the growth of the last barrier layer 61, the carrier gas was switched over to hydrogen from nitrogen at 750° C. in the reactor without unloading the substrate from the reactor. The substrate was simultaneously heated to 1050° C. to permit the p-type AlGaN layer 7 and the following respective layers to grow continuously.

[0061] P-type manifestation processing was carried out by placing the wafer 1 and the wafer 2 in a heat treatment reactor at treatment temperature of 800° C. for 20 minutes in nitrogen gas at atmospheric pressure.

[0062] Formed on each of the resultant wafers 1 and 2 were a terrace for the p-type electrode, a current channel structure for the n-type electrode, and a waveguide channel of ridge structure on the terrace for the p-type electrode, which channels serve as a refractive index waveguide structure for current constriction.

[0063] A narrower ridge structure was formed on the substrate by using general photolithography and reactive-type ion-etching (RIE) to remove portions except the ridge portion of 5μm in width while leaving the p-type AlGaN clad layer 9 of about 0.1μm. Likewise, RIE was then used to remove unnecessary portions containing the p-type layers and expose the n-type GaN base layer 3 partially.

[0064] After removal of the etching mask, an SiO₂ protective layer was deposited by means of the sputtering method or the like. A window having a width of 3μm was formed in the p-type ridge portion on the SiO₂ protective film. A window for n-type electrode was formed in the exposed portion of the n-type layer on the SiO₂ protective film.

[0065] An n-type side electrode 14 was formed in a region on which the n-type GaN layer 3 was exposed, by depositing Ti (titanium) to the thickness of 50nm and subsequently Al (aluminum) to 200 nm. The p-type side electrode 13 was formed in a region, where the p-type GaN layer was exposed, by vapor depositing Ni (nickel) in thickness of 50 nm and Au (gold) in 200 nm.

[0066] The wafer formed in this manner was cleaved to form a device shown in FIG. 1. Thereafter, the characteristics of the respective devices were determined. The measurement was performed with pulses having a cycle of 0.5μsec and a duty ratio of 0.02%.

[0067] Referring to FIG. 5, points depicted by  indicate current/light output characteristic of a device according to the embodiment of the invention, which was formed from the wafer 1. The device oscillated with a threshold current of about 430mA at a wavelength of 405nm. points depicted by ◯ in FIG. 5 indicate current/light output characteristic of a device formed from the wafer 2, i.e. the comparative example formed by the film forming method. The device oscillated with a threshold current of about 800MA at a wavelength of 410nm.

[0068] In comparison of both devices, it was found that the threshold current in this embodiment is reduced to about ½times that of the comparative example and that the characteristics are improved greatly.

[0069] Consequently, with this embodiment, electrons and holes injected are mainly collected in the well layers 62 of smaller bandgap in the active layer. These carriers are then blocked by the AlGaN barrier portion 51 of the same material as that of the barrier layer 7 and having a larger bandgap around the threading dislocations, so that they cannot reach the threading dislocations 15. As a result, the threading dislocations do not act as centers of non-radiative recombination. Meanwhile, the carriers within the comparative device can freely reach the threading dislocations, so that the threading dislocations act as centers of non-radiative recombination to degrade the light emitting characteristics.

[0070] In an alternative embodiment, the etching process can be performed in the film forming apparatus. In this case, vapor etching is performed. HCL (hydrogen chloride) can be used as a etching gas. Also, evaporation of the InGaN layer may be promoted by increasing a ratio of hydrogen in the carrier gas while decreasing a NH₃ flow rate as compared with that of the normal growth. However, effects of the above method are not so effective as that of the above described embodiment.

[0071] While the above embodiment adopts the method for etching to form holes around threading dislocations in the active layer, a second embodiment adopts a method for forming holes in-situ around threading dislocations in the active layer. That is, the second embodiment utilizes inhibition of growth on the threading dislocations in crystal growth under particular film forming conditions.

[0072] Like the first embodiment, the n-type GaN layer 4 and the n-type GaN guide layer 5 were grown on the sapphire substrate 1.

[0073] Then, the wafer was cooled to a temperature in the range of 600 to 850° C., for example 770° C. A pit generating layer 5 a of the n-type InGaN doped with Si was grown to a thickness of 400 Å as shown in FIG. 6 by switching the carrier gas from hydrogen to nitrogen and maintaining a low temperature of 770° C. to permit growth with TMI, TMG, ammonia, and methylsilane as materials. In this process, portions 60 not undergoing crystal growth were formed in an initial step. In addition, a material of the pit generating layer 5 a is not limited to InGaN but may be a material having a bandgap equal to or greater than that of a material, such as GaN, AlGaN or the like, which forms the active layer. Also, non-doped material may be used. Generation of pits is promoted by a decrease in growth temperature. However generation of pits cannot be adequately promoted unless growth temperature is decreased to 850° C. or less. Further, pits are generated at 600° C. or less, which is not preferable because of degradation in a fundamental layer quality. Further, to permit the portions 60 not undergoing crystal growth to be surely generated around threading dislocations, the pit generating layer 5 a is required to have a thickness of 100 Å or more, and preferably about 200 Å. However, because growth temperature is lower, the layer quality becomes somewhat degraded as compared with the normal crystal layer formed at 1050° C. Also, waveguide loss increases when the pit generating layer 5 a has a thickness more than required.

[0074] Subsequently, an active layer 6 was formed on the pit generating layer 5 a at 770° C. First, a barrier layer 61 was formed from TMI, TMG, ammonia and methylsilane as precursors, and a well layer 62 was then formed while the feed of methylsilane was stopped and a flow rate of TMI was increased. This process was repeated a predetermined number of times to grow a MQW active layer 6 as shown in FIG. 7. In this manner, prior to formation of the active layer 6, the pit generating layer 5 a was formed in a temperature range of 600-850° C., and pits 49 were formed when the active layer 6 was formed. It should be noted that the active layer is not limited to MQW.

[0075]FIG. 8 is an electron microscope photograph which was taken of a wafer with the active layer inclined at 45 degrees. the density of recesses is 5×10⁹/cm², which is substantially equal to the density of threading dislocations in the film.

[0076] In a comparative example, a wafer was also formed in the same manner as in the second embodiment except that the pit generating layer 5 a, formed at lower temperature, was not formed.

[0077] To compare the light emitting characteristics of the second embodiment with that of the comparative example, exciting intensity dependency of the light emitting intensity in the MQW active layer 6 in the wafer was measured. FIG. 9 is a graph showing a result of measurements with respect to the exciting intensity dependence of the light emitting intensity related to wafers in the second embodiment and the comparative example. An excitation laser was a nitrogen laser for emitting light with a wavelength of 337.1nm. A horizontal axis of the graph indicates values with total laser output being 100%. Points depicted by □ indicates the exciting intensity dependence of the first example, and points depicted by ▪ indicates the exciting intensity dependence of the second example. It was found that the second embodiment (▪) is five to ten times as great in light emitting intensity as that of the comparative example (□) in the measurement range.

[0078] The above-described first and second embodiments have a main feature in the pit forming process of forming recesses attributable to threading dislocations in the semiconductor layers disposed below the active layer. Another of the important points in applying the present invention to light emitting devices is to fill the pits 49 shown in FIGS. 4 and 7 with AlGaN to smooth the the surface thereof when the barrier layers 7 of Al_(x)Ga_(l-x)N is formed. In this regard, a third embodiment will be described, which is applied to the above first and second embodiments with respect to the process of forming the barrier portions.

[0079] To cause flattening of AlGaN to suitably proceed in the process of forming the barrier portions, a higher temperature of 1000° C. or more is required to form the layer. In the step of increasing temperature up to the layer formation temperature, ingredients of the active layer 6 (the well layers 62 and the barrier layers 61) having completed growth tended to evaporate. In particular, the barrier layers 61 on the outermost layer in the multiple quantum wells tended to deteriorate.

[0080] At the time when the formation of the active layer 6 (that is, the well layers 62 and the barrier layers 61) of InGaN was completed, a low temperature AlGaN barrier layer 71 started to be grown. The low temperature AlGaN barrier layer 71 is a film constituting a part of the AlGaN barrier layer 7. The low temperature AlGaN barrier layer 71 is formed by utilizing the fact that AlN has a much higher temperature stability as compared with that of GaN contained in the atmospheric gas. The evaporation of the above described GaN ingredients can be effectively prevented by depositing the low temperature AlGaN barrier layer 71 having an AlN composition ratio of about 0.2 and a thinner thickness. The low temperature AlGaN barrier layer 71 preferably has a thickness corresponding to a layer of several molecules, that is, about 20 Å. A thickness which is too thick may result in preventing holes in the p-type layers from injecting to the AlGaN barrier layer 71. Thus the thickness is preferably less than 100 Å.

[0081] When the structure of the third embodiment is applied to that of the first embodiment to form a light emitting device, a wafer is unloaded from the reactor, and etched to form pits 49 in the active layer 6, thereby forming a low temperature AlGaN barrier layer 71.

[0082] When the structure of the third embodiment is applied to that of the second embodiment to form a light emitting device, a low temperature AlGaN barrier layer 71 is grown immediately after forming the active layer 6 without changing the substrate temperature. Thereafter, the carrier gas is switched from nitrogen to hydrogen, the substrate is heated to 1050° C. for the subsequent film formation.

[0083] In either of the above cases, the AlGaN barrier layer 7 is grown in the hydrogen carrier after increasing the temperature rise to 1050° C.

[0084] With the third embodiment, the pits 49 are hardly filled up because the low temperature AlGaN barrier layer 71 grows at low temperatures. FIG. 10 shows such state.

[0085] In the light emitting device according to the third embodiment, the low temperature AlGaN barrier layer 71 has a lower composition ratio of AlN than that of the AlGaN barrier layer 7. This is because, if the low temperature AlGaN barrier layer 71 has a larger composition ratio of AlN than that of the AlGaN barrier layer 7, holes 17 injected from the p-type guide layer (shown by the dotted lines) would tend to be injected into the barrier portions 51 of the AlGaN barrier layer 7 which has a smaller composition ratio of AlN (or a smaller bandgap).

[0086] By setting the AlN composition ratio of the low temperature AlGaN barrier layer 71 to be less than that of the AlGaN barrier layer 7, the holes 17 (shown by solid lines) injected from the p-type guide layer are blocked by the barrier portions 51 as well as electrons 16 injected from the n-type GaN layer, thereby not reaching the threading dislocations 15.

[0087] Accordingly, when the structure of the third embodiment is applied to that of the second embodiment to form a light emitting device, after the growth of the active layer, a low temperature AlGaN barrier layer 71 is formed at substantially the same temperature as that of the growth temperature of the active layer. A second AlGaN barrier layer 7 is then formed after temperature increase. Also, in applying the structure of the third embodiment to any one of the above embodiments, the AlGaN barrier layer 7 is set to have a larger composition ratio of AlN than that of the low temperature AlGaN barrier layer 71.

[0088] While the first to third embodiments have been described with respect to laser devices, the present invention can provide similar effects in the case of being applied to formation of LED (light emitting diode).

[0089] It is understood that the foregoing description and accompanying drawings set forth the preferred embodiments of the invention at the present time. Various modifications, additions and alternative designs will, of course, become apparent to those skilled in the art in light of the foregoing teachings without departing from the spirit and scope of the disclosed invention. Thus, it should be appreciated that the invention is not limited to the disclosed embodiments but may be practiced within the full scope of the appended claims. 

What is claimed is:
 1. A nitride semiconductor light emitting device comprising: an active layer comprising group-3 nitride semiconductors, a barrier layer made from a predetermined material and provided adjacent to said active layer, said barrier layer having a greater bandgap than that of said active layer, and a barrier portion formed of said predetermined material for surrounding a threading dislocation in said active layer, said barrier portion being defined by interfaces enclosing said threading dislocation.
 2. A nitride semiconductor light emitting device according to claim 1, wherein said active layer has one of a single and multiple quantum well structure.
 3. A nitride semiconductor light emitting device according to claim 1, wherein said predetermined material of said barrier layer fills up a recess enclosed with said interfaces on said active layer to smooth surfaces of said recess.
 4. A nitride semiconductor light emitting device according to claim 1, wherein said barrier portion has one of a coneshape, truncated cone shape and a combination thereof.
 5. A nitride semiconductor light emitting device according to claim 1, wherein said group-3 nitride semiconductor single-crystal layers are (Al_(x)Ga_(l-x))_(l-x)In_(y)N (O≦X≦1, 0≦y≦l).
 6. A nitride semiconductor light emitting device according to claim 5, further comprising a low temperature barrier layer provided between said barrier layer and said active layer, said low temperature barrier layer being formed of substantially the same predetermined material as that of said barrier layer at substantially the same temperature as the growth temperature of said active layer.
 7. A nitride semiconductor light emitting device according to claim 6, wherein said low temperature barrier layer has a composition ratio of AlN which is less than a composition ratio of said barrier layer.
 8. A method of manufacturing a nitride semiconductor light emitting device, said device comprising an active layer provided by depositing group-3 nitride semiconductor single-crystal layers (Al_(x)Ga_(l-x))_(l-x)In_(y)N (O≦X≦1, 0≦y≦l), said active layer having a predetermined bandgap, and a barrier layer provided adjacent to said active layer, said barrier layer having a greater bandgap than the bandgap of said active layer, said method comprising the steps of: forming a pit defining a recess attributable to a threading dislocation in said semiconductor layers formed on a substrate in said active layer of group-3 nitride semiconductor single-crystal layers; and depositing a material of said barrier layer on said active layer to form a barrier portion spreading around said threading dislocation, said barrier portion having an interface defined by a side surface of said recess.
 9. A method of manufacturing a nitride semiconductor light emitting device according to claim 8, wherein said step for forming the pit comprises a step of etching said active layer after said active layer is formed.
 10. A method of manufacturing a nitride semiconductor light emitting device according to claim 9, wherein in the step of etching, the etching terminates when corrosion partially reaches said semiconductor layers along said threading dislocation.
 11. A method of manufacturing a nitride semiconductor light emitting device according to claim 8, wherein said step for forming the pit comprises a step of forming said semiconductor layers at a temperature within a range of 600-850° C. prior to deposition of said active layer.
 12. A method of manufacturing a nitride semiconductor light emitting device according to claim 8, further comprising the step of forming a low temperature barrier layer of substantially the same material as that of said barrier layer at substantially the same temperature as a growth temperature of said active layer between said step of forming the pit and said step of depositing the material.
 13. A method of manufacturing a nitride semiconductor light emitting device according to claim 12, wherein said low temperature barrier layer has a composition ratio of AlN less than a composition ratio of said barrier layer. 